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Microwave Sintering Of ZnO Varistor

Posted on:2012-05-27Degree:MasterType:Thesis
Country:ChinaCandidate:D B ZhangFull Text:PDF
GTID:2212330368481146Subject:Materials Physics and Chemistry
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ZnO varistor is an electronic material applied widely because of its high nonlinearity, other varistors can not be compared with it,so the researchers are more interested in it. The microwave sintering ZnO varistor becomes popular research direction because of its technological advantage, however how to achieve their stability by microwave sintering is not resolved, researchers still need to engage on the work.The varistors wered prepared by microwave sintering.The study found that the preparation of ZnO varistor sample in absorbing microwave ability is poor, sintering temperature which can't reach the temperature of preparing the fine ceramic.is not high Do the Orthogonal analysis about the previous experiments,in order to guiding the later experiments. Mainly do the orthogonal analysis and the comparison of the two experimenta formula, get the influence degree of the different factors to the ZnO varistor electrical properties.When the ZnO varistors wered prepared by Microwave-assisted heating, Separately studied the influence trend of milling time, synthetic method, sintering temperature, heating rate, holding time on the sample electrical properties. Electrical properties of prepared samples are:varistor voltage(150V/mm~360V/mm),leakage current (12μA~32μA),nonlinear coefficient (12~65)。Based on microwave-assisted sintering ZnO varistors, achieve low-voltageZnO varistor by doping. Analyze the impact of three major doping substances PbO,B2O3,TiO2 on the electrical properties of ZnO varisto. The electrical properties change with the dopant content. Lowest varistor voltage of the samples is 65V/mm, reduce varistor voltage by doping.
Keywords/Search Tags:ZnO varistor, Microwave sintering, Doping, Orthogonal analysis, Electrical properties
PDF Full Text Request
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