Preparation And Characterization Of Highly C-axis Oriented InN On Sapphire Substrates By ECR-PEMOCVD

Indium nitride (InN) has attracted an extensive interest for the properties of its alloys with GaN and AlN, which permit the fabrication of InGaAlN based shortest wavelength semiconductor laser diode. Nevertheless, in contrast to the other constituent GaN, The physical properties of InN are rather poorly known. Among the group-Ⅲnitrides, InN has some promising transport and electronic properties. Compared to all other group-Ⅲnitrides, InN possesses the lowest effective mass, the highest mobility and the highest saturation velocity. Therefore, it is very suitable for high speed and high frequency electronic device applications. As a result of these properties, InN is regarded as an attractive material for applications in solar cells, terahertz emitters and detectors.So far, the films of InN have been prepared by different type of methods, including metal organic vapor-phase epitaxy (MOVPE), molecular beam epitaxy (MBE) and hydride vapor-phase epitaxy (HVPE), Pulsed laser deposition (PLD) as well as sputtering However, data on properties of grown InN by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) are quite scarce. Since the multicusp cavity-coupling ECR plasma source was adopted to provide active precursors, the growth temperatures were decreased to 600℃. ECR-PEMOCVD was utilized specially for low-temperature growth of epitaxy films of InN GaN, and AlN. In addition, the roles of plasma with high-active function and low ion damage are essential for the pretreatment of the substrate surface, initial nucleation.This paper describes preparation and characterization of InN films onα-Al2O3 (0001) by (ECR-PEMOCVD). Trimethyl-indium (TMIn) and high-purity N2 were used as sources. The influences of N2 flow and growth temperature are investtgated.After the experiment, the structure, surface morphological and electrical characteristics of InN were investigated by in-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Hall Effect Measurement (Hall). These results indicate that ECR-PEMOCVD technique is promising for the growth of the high-quality InN films.