Font Size: a A A

On-State Properties Of PiN Junction

Posted on:2013-01-28Degree:MasterType:Thesis
Country:ChinaCandidate:J JiaoFull Text:PDF
GTID:2218330371960779Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The differences of PIN power semiconductor between our country and some advanced international companies are the huge power-dissipation. Therefore, the way to reduce the power-dissipation of semiconductor has been our principal task. However, the power-dissipation of semiconductor is due to on-state. That means, to understand the on-state theory deeply, thus some way to tackle this problem must be found.In this paper, based on the known calculation of PIN power semiconductor on-state voltage, the analysis of three well-developed on-state model and voltage formula and research on influence of on-state characteristics by body effect and parameter, the calculation process similar with PIN ideal on-state voltage was concluded. Since more accurately estimating the device's on-state voltage can be achieved in design process, lower power-dissipation could also be achieved.By using this theory and assisting of MATLAB, the calculation method and curvature of this theory are given. Also the way to reduce on-state power-dissipation is concluded. Based on research of domestic company, on-state voltage characteristics simulation function is proposed for the first time which compensates the deficiency of direct streaming technology creatively from device prospective. Product sample with international standards and specification are given in this paper which corrects error and insufficiency of domestic manufacturer.
Keywords/Search Tags:PIN power semiconductor devices, simulation function, direct streaming technology, on-state
PDF Full Text Request
Related items