A Study Of Semiconductor Nano-aluminum And Aluminum Alloy Thin Film Of Hall Effect

In this paper, we steaming aluminum films on glass substrates use of vacuum evaporation coating method. Measured resistivity and Hall coefficient of aluminum films. Annealing treatment was carried out on the aluminum films, and study the effect of annealing on resistivity and Hall effect. The surface morphology of aluminum films was observed by scanning electron microscopy (SEM) before and after annealing.Surface of aluminum film prepared by the vacuum evaporation method, was uniform, dense, continuous. With the increase of film thickness, grain size and the surface roughness increases. The resistivity of the different thickness of aluminum films was measured by the Four-probe method. The resistivity is decreased with the increase of aluminum films thickness. It shows that scattering of Surface and grain boundary to electrons was weakened lead to the electron mobility increased, the resistivity decrease.According to the principle of Hall-effect, we design and assembly of the experimental device for measuring the Hall voltage, and measured the Hall voltage of aluminum films of different thickness. The Hall coefficient of the aluminum film samples bigger than the bulk metal aluminum, Hall coefficient gradually increases with the decrease of the aluminum film thickness. It shows that reduce the thickness of the aluminum films can reduce the carrier concentration, and increasing the Hall coefficient.After annealing treatment, the grain size increases, the defect concentration is reduced and the surface of film becomes smooth. The resistivity of the films gradually decreasing with the increasing of annealing temperature, it shows that with the increasing annealing temperature, the grain size increases gradually, the defect concentration decreases gradually. Grain boundaries and lattice defects on carrier scattering weakened lead to the resistivity is decreased. Hall coefficient of thin films gradually decreases with increasing annealing temperature, it shows that the carrier concentration was increased.