Transport Properties Of Graphene Nanoribbons With Stain And Line Defect

In this paper, we studied the electronic transport properies of graphene nanoribbons bythe tight-banding model and Landau-B u tti kerformula. We studied the effect of stains and linedefect on the electronic transport properies of graphene nanoribbons. The main conclusion isfollowing:We studied the pseudo magnetoresistive（PMR）effect of graphene nanoribbons inducedby stains. We found that when the stains are perpendicular on the two leads of the zigzaggraphene nanorribbons, the PMR is most obvious and the PMR value can be up to100%. ThePMR can be adjusted by changing the size of the nanoribbons width, the angle of the stainand the magnitude of stain. Next we found that the semimetallic armchair graphenenanoribbons can also produce the PMR effect under stains. The reason of the PMR effect isthat the two interphases of leads is not match at all. The case of the non-semimatellicarmchair graphene nanoribbons is correspond to the semimatellic.We calculated the effect of conductance and dispersion relation of armchair nanoribbonsinduced by line defect. We found that in the superlattic of the line defect, the electron-holesymmtry was broken and a flat band was created at E t. Compared with defect-freearmchair graphene nanoribbons, line defects nanoribbon is a non-semimetallic, but it has norelation to the width N. For the finite superlattic of the line defect withN Cline defects, aquasi-bound state would be formed between the two line defects. In the conductancespectrum, there would be appeared a group of N C1splitting resonant peaks.