Study Of AR-ITO Thin Films Deposited On Hemispherical Glass Substrate

Attribut to the excellent properties of high electrical conductivity, high opticaltransmittance in the visible range and effective attenuation to microwave, thetransparent conductive oxide material ITO was widely used in electronic andphotoelectric domain，and show expected prospect in military technology such aselectromagnetic shielding and Radar wave stealth.The optical and electrical performance of single layer ITO film exists physicallimits, utilization of technical parameter adjustment in improving optical propertiescan bring the reduction of electrical properties. At the same time, there is rare researchwork of ITO thin film deposited on abnormity large size substrate such as fairing andlampshade, and no systematic solution of depositing uniform and excellent ITO thinfilm on abnormity large size substrate was obtained. By the principle of interferencecountervail of multiple interface reflected light, the purpose of this thesis is to studythe AR-ITO technology, to increase the optical transmittance of ITO thin film underthe premise of maintain the square resistance, and deposit high performance AR-ITOon the surface of abnormity substrate through the study of film deposited technique onabnormity substrate.The research of this thesis possesses certain theoretical andpractical significance.The main research work and results include：1. Study of the properties of ITO thin film deposited by ion assist electron beamevaporation. It was found that substrate temperature, deposited rate and oxygen flowrate have significant influence on the crystal structure, surface morphology,transmittance in visible range, optical band gap, plasma wavelength and squareresistance of ITO thin film, and decide to the position of short-wave cut-off limit andlong-wave absorption limit of ITO thin film. The150nm ITO film deposited utilizingthe gained prime technical parameters possesses a resistivity of1.44×10-4·cm, andthe average transmittance in visible range of the combination of film-substrate canreach to82.6%.2. Study of ITO thin film deposited on hemispherical glass substrate. No matterwhat kind of workpiece is used during the deposition process, from the top center tothe edge of the hemisphere, the thickness of ITO film reduce, and square resistanceand average transmittance in the visible range increase. Film thickness distribution isin correspondence with the calculated value in general when deposited using stillworkpiece. In comparison with other operation mode of the workpiece, the uniformityof film thickness, square resistance and average transmittance in visible range of ITOthin film deposited on hemispherical substrate is greatly improved when depositedusing planetary workpiece with the pivot angle of0°. 3. Study of AR-ITO thin film deposited on hemispherical glass substrate. Amongthe AR-ITO projects optimized by optical thin film design software, project: Glass︱ITO︱SiO2︱Air show a high transmittance in visible range, the averagetransmittance is91.0%approximately between400~800nm wavelength range,with aincrease of about4%in comparison with the transmittance of substrate, it greatlyimprove the optical properties under the premise of maintain the square resistance witha certain film thickness.The AR-ITO project: Glass︱ITO︱SiO2︱Air was prepared on thesurface of hemispherical glass substrate using the plantary workpiece with pivot angleof0°, the average transmittance in visible range of different positions onhemispherical substrat is uniform, the difference of transmittance is below4.2%, theelectromagnetic shielding efficiency of the coating component is about10dB in therange of400MHz~1GHz.