The Study On Preparation And Mechanism Of Bi-doped Special Glasses With Near-infrared Broad-band Emission

Studies have found that the luminescence center wavelength of the Bi ions doped silicate glass¹.3μm near ultra-broadband luminescence. The half-height width of fluorescence spectra（FWHM） was up to200nm above, the fluorescence lifetimes as long as⁶00μs. However, theBi-doped germanium niobate glasses study is few. In this paper, we developed broadband emissionform Bi doped in different oxides, and studied the luminescence properties of Bi ions influenced byBi₂O₃concentration. And we made a preliminary judgment of Bi ions ultra-broadbandlight-emitting mechanism.In chapter one, we outlined the research and progress of the fiber amplifier, optical glass andBi ions. And introduced some measurements related to our research.The second chapter discussed Bi₂O₃doped glasses with concentrations of （0.9-x）GeO₂-xNb₂O₅-0.1BaO （x=0.04，0.07，0.1molar） glasses were prepared by conventional meltingmethod. The differential thermal analysis（DTA）curves, absorption spectra, fluorescence decaycurve and X-Ray photoelectron spectroscopy （XPS） were measured. Based on the XPS, one mayconclude that Bi³⁺and Bi⁵⁺ions co-exist in the glass. The near infrared broadband emission may beassigned to Bi⁵⁺ion based on the results of emission spectra and XPS.The third chapter discussed Bi-doped GeO₂-Nb₂O₅-M （M=Li₂O, Na₂O, CaO） glasses. TheBi ion doped with1molar percent concentration of80GeO₂-10Nb₂O₅-10M（M=Li₂O,Na₂O,CaO）glasses were prepared by conventional melting method. The DTA curves, absorption spectra,fluorescence lifetime and Fourier Transform infrared spectra （FTIR） were measured. Theemission band at1300nm with FWHM near200nm and fluorescence lifetime near133μs wasobserved under the excitation of808nm laser diode （LD）. In the three-component glasses, the onewith Li₂O has the strongest near-infrared emission. The Bi³⁺and Bi⁵⁺ions co-exist in the glass fromthe FTIR. The near infrared broadband emission is probable to the emission of Bi⁵⁺.Finally, we concluded all the results that have been obtained in the paper, and anticipate theprospect of Bi doped broadband emission materials.