Controllable Growth And Characterization Of Low Dimensional Zinc Oxide Nanostructures

As a direct wide band gap semiconductor material, owing to these outstandingproperties, zinc oxide has caused widespread attention and researchers have obtainedremarkable achievement. However, the controllable growth of zinc oxidenanostructures and doping are still for us to solve the research topic. In this study,focusing on low-dimensional zinc oxide nanostructure, zinc oxide thin films wereprepared by using of magnetron sputtering and zinc oxide nanowires/nanotubesarrays were synthesized by using of wet chemical methods. Pressure sensors andheterojunction devices were prepared by using one-dimensional zinc oxide nanowires.Modern materials testing methods were carried to analyze the morphology, structure,growth mechanism and optical and electrical properties of zinc oxide nanostructuresand devices,During preparing zinc oxide in the magnetron sputtering experiments, weoptimized the experimental parameters to obtain the excellent zinc oxide thin filmsand their photoluminescence properties. In addition to the intrinsic UV emission with360nm-380nm, zinc oxide thin films had a strong blue-violet emission peak, whichare located in415nm and440nm. It proposed that the mechanism of the blue-violetemission peaks were due to the transition between conduction band to zinc vacancy(V_zn) and from interstitial zinc (Z_ni) to valence band. We prepared zinc oxidenanostructures by wet chemical methods and controlled to synthesize zinc oxidenanotubes and nanowires by regulating the growth concentration. zinc oxidenanotubes inner and outer diameters were about3nm-12nm and18nm-30nm. Weadvocated the screw dislocation mechanisms for zinc oxide nanotubes growth. Inaddition, we prepared zinc oxide nanotube with the outer diameter larger than100nmby self-etching method. We successfully prepared the devices of sensitive pressuresensors and heterojunction with zinc oxide nanowire arrays. The average Schottkybarrier height （SBH） of as pressure sensors changed26mev at the conditions of the0.12%strain. It had excellent pressure sensors properties. zinc oxide heterojunction diodes with graphen buffer layer showed the electrical properties of Schottky diodes,which were different from the electrical properties of traditional diodes and hadexcellent electrical characteristics. These devices based on zinc oxide nanostructuresbuilt a certain foundation for the applications of nanodevices...