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Study On The Graphene Preparation On Zinc Oxide Substrate By CVD

Posted on:2013-03-13Degree:MasterType:Thesis
Country:ChinaCandidate:Z R LiuFull Text:PDF
GTID:2231330377455364Subject:Optics
Abstract/Summary:PDF Full Text Request
Graphene is a monolayer film of carbon atoms, with two-dimensional hexagonal honeycombnetwork structure. The unique structure determines its excellent electrical properties, opticalproperties, thermodynamic properties, chemical properties. Graphene has been widely applied in theelectronic devices, composite materials, energy storage materials, optoelectronic materials.Graphene can be prepared in different ways including micro-mechanical stripping method, graphiteoxide reduction method, epitaxial growth method, chemical vapor deposition method. In this thesis,the preparation of graphene by chemical vapor deposition is explored from carbon source, substrate,and growth conditions.In this thesis, zinc oxide is selected as the substrate which is prepared by RF magnetronsputtering method on silicon wafer(111). With the conditions unchanged, i.e. the magnetronsputtering pressure (3.0Pa), argon ratio(8sccm) and oxygen ratio(12sccm), temperature (normaltemperature), and the sputtering time (90min), different zinc oxide substrates are prepared byvarying sputtering power, respectively at300W,250W,200W, and150W. Through testingcharacterization, it is found that the structure and morphology of zinc oxide thin films is graduallyimproved, with the increase of sputtering power. Hence, graphene is prepared on the zinc oxidesubstrate obtained with sputtering power at300W and at250W.With benzene as the carbon source, graphene is prepared on the zinc oxide thin films bychemical vapor deposition method. Through analyzing such factors as the growth temperature, flowrate of benzene, reaction time and substrate, it is found that graphene generated on the zinc oxidethin film is superior when the growth temperature is800℃, the flow rate of benzene is about10μl/min and reaction time is10min. Analysis shows that the graphene grown on ZnO at300W isthinner, smoother and more evenly distributed than that generated at250W. The TEMcharacterization of the graphene grown on ZnO at300W shows that graphene layer is rough anduneven continuous carbon film with curled graphene walls like a honeycomb. The concave sizeranges from10nm to100nm. The graphene wall is about4~5nm thick with fewer layers. But thegraphene sheets are completely amorphous and disordered. In addition, the process of graphenegrowth on Zinc oxide substrate is theoretical analysed.
Keywords/Search Tags:Graphene, Zinc oxide, CVD, Magnetron sputtering, Benzene
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