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The Synthetize And Optical Properties Research Of Silicon Nanowires By The Wet Etching

Posted on:2013-01-01Degree:MasterType:Thesis
Country:ChinaCandidate:Y B WangFull Text:PDF
GTID:2231330377455669Subject:Condensed matter physics
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Silicon is an important semiconductor material and the most widely used in microelectronic device, which is called one of the greatest achievements in twentieth Century. Owing to monocrystalline silicon is a kind of indirect bandgap material with band gap width of1.12eV. It only emit red light, and the light emitting efficiency is relatively low. It is difficult to realize the photoluminescence at room temperature and make optical devices. Thus the application in optical detection and optical sensing of silicon is limited. As one-dimensional materials semiconductor nanowires with quantum size effect, and electrical, optical, mechanical, chemical characteristics and unique morphology and large specific surface area, have become the key of future nano technology development. At present, carbon nanotubes and silicon nanowires is bound of the hotspot in science and technology. Silicon nanowires are one-dimensional semiconductor materials with a direct band gap and high density of dangling bond distributing on the surface. It also can absorb large amounts of gas molecules and biomolecules. Due to the quantum confinement effect, silicon nanowires can emit visible light, which make it has great potential in the application of light detection and optical sensing. Compared with carbon nanotubes, one-dimensional nanosilicon materials have stable properties and are compatible with modern semiconductor technology, which determines that the silicon nanometer materials have more practical value in the field of microelectronics.In this work, we adopt different wet etching silicon substrate process to prepare silicon nanowires. The samples were characterized by scanning electron microscopy and photoluminescence. Study on the influence of concentration of AgNO3, reaction time substrate types and substracts on the porosity of Si nanowires. Finally optimized growth condition Si nanowires is obtained. Furthermore, we prepared Si nanowires with controllable porosity by polystyrene spheres templates. The results show that the intensity of luminescence is in direct proportion to the porosity of silicon nanowires...
Keywords/Search Tags:Si nanowires, wet etching, porosity, intensity of photoluminescence
PDF Full Text Request
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