Preparations And Properties Of Doped ZnO Thin Films And Buffer Layers

ZnO is a wide bandgap semiconductor material with excellent photoelectricproperties, and has broad applied prospects in the field of ultraviolet detector,transparent conductive pole, solar cells, and liquid crystal display. Pure ZnO thinfilms are almost non-conductive, however doping elements can improve itsperformance in order to meet the requirements of different devices.In this paper, ZAO thin films were prepared on glass and silicon (100)substrate by the Al/Zn double-target reactive magnetron co-sputtering. By XRD,XPS, AFM, SEM, PL spectrum, UV-visible spectrophotometer, four-probe meterand scratch test instrument, the film structure and optoelectronics performancewere characterized. The influences of gas pressure, annealing temperature, oxygenargon ratio and sputtering power on the ZAO thin film structure and photoelectricproperties are thoroughly analyzed. In addition, in order to solve the latticemismatch between ZAO thin films and silicon (100) substrate, we add SiC bufferlayer between ZAO thin films and silicon (100) substrates and analyse theproperties of SiC buffer layer. The main contents are as follows:The first chapter outlines the ZnO thin films crystal structure，properties，preparation methods and the applications.The second chapter introduces the film growth process, the principle ofmagnetron sputtering, instruments, materials and characterization methods.The third chapter studies the influence of the sputtering process parameters onthe structures and properties of ZAO films, such as the gas pressure, oxygen argonratio, annealing temperature etc. The film structure, composition, surfacemorphology, optical properties and electrical properties were characterized by XRD,XPS, AFM, SEM, UV-VIS, PL spectrum and four-probe tester. The optimumparameters of the prepared films were obtained.The fourth chapter studies the influence of sputtering power of Al target on thestructure and properties of monocrystalline silicon (100) based ZAO films. TheXPS result shows that optical and electrical properties of thin film are best withdoping1.17%Al.The fifth chapter studies the influences of the deposition rate of SiC thin filmsand annealing temperature on their structures and surface morphologies under different processing parameters.The sixth chapter studies the impact of the SiC buffer layer on the silicon (100)ZAO thin film structure and properties. The film structure, composition, surfacemorphology, photoluminescence, resistivity and adhesion strength werecharacterized by XRD, SEM, PL, four-probe tester and scratch instrument.The chapter seventh gets conclusions and outlooks future．...