| Cathode ray tube （CRT） is a kind of display device that was first to be invented.It is widely accepted due to its highest qualities on display color, wide imaging and darkspot. But CRT has some deficiencies such as heavy weight, huge bodies and high powerconsumption, which confine its development. The new trend of display technology is lightweight and small body. As a lastest kind of display, Field emission fiat display （FED） is avery promising panel display technology, which not only possesses excellent displayquality as CRT but also can make up for the deficiencies of CRT.As the key point of FED, cold cathode determines the performance of fieldemission, so choosing appropriate cathode materials is very important. Many cold cathodematerials have been studied, such as metal, silicon, diamond and diamond like carbon（DLC） in its development history. Carbon nanotubes（CNTs） are one-dimensional nanomaterials, they can be used as cathode materials of FED due to its excellent mechanics,electricity, thermal and chemical function and become key point of research in recentyears.．However, up to date, combining properties of CNTs，are not satisfied for itsapplication of inderstory. So it’s crucial to improve the process make combining and fieldemission properties better for their commercial applications.In this paper, field emission properties of CNTs films are systematicallyresearched and its main points are as follows:（1） The preparation of CNTs by electrophoretic deposition （EPD） and themeasurements of field emission properties of CNTs.Carbon nanotubes films were deposited at silicon basement by electrophoreticmethod. Surface morphology was researched by OM and SEM, field emission properties ofCNTs films were measured by a diode system assembly. The CNTs film was used as acathode, and a phosphorus coated indium tin oxide （ITO） glass as an anode. The two electrodes were separated by a170μm spacer. Process parameters of EPD were researched,and the conclusion is that the CNTs film has better field emission properties with a turn onelectric field of0.188V μm-1and emission current density of5.4mA cm-2at the electricfield of2.8V μm-1, when the voltage is90V, time is120s, distance between two counterelectrodes is3cm, temperature is25℃and dispersant is IPA.（2） Effection of as-prepared film on field emission properties of CNTs films.To improve the combining and field emission properties of CNTs films, Ti filmsand W films were deposited at silicon basement by direct-current （DC） megnetronsputtering separately, called metal/Si. Then CNTs films were deposited at metal/Sibasement by electrophoretic method, called metal/Si-CNTs. The field emission ofmetal/Si-CNTs films and CNTs films deposited at same process parameters were compared.The conclusion showed that as-prepared Si film can greatly improve the field emission ofCNTs films, the turn-on field decreased from0.188V μm-1to0.132V μm-1. The emissioncurrent density is of9.1mA cm-2at the electric field of2.4V μm-1. As-prepared W filmcan not improve the field emission of CNTs films. |
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