Preparation And Analysis Of Opto-electrical Divert&Catalytic Materials On Polyimide/Carbon Nanocomposite Electrodes

In this master’s paper, several thin films material possessed photoelectric conversion and catalytic performance is researched and prepared on polyimide (PI) and carbon nanotubes (CNTs), graphene (GE) composite membrane by means of cyclic voltammeter (CV), Amperometric i-t, differential pulse voltammetry (DPV) technology, and so on. The structure, surface morphology, composition and performance of the as-prepared thin films are characteried by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) with an energy dispersive X-ray (EDS) analyzer, and some spectrophotometer. The main contents are as follows:1. Electrochemical atomic Layer deposition (EC-ALD) of nanosemiconductor CuSe on PI/COOH-CNTs composition membrane and photoelectric property researchesThe CuSe thin films were successfully prepared on PI/COOH-CNTs membrane by EC-ALD technology. Through the electrochemcial study of cyclic voltammetric behaviours, the deposition potential of Cu and Se were determined; The Cu and Se atomic layer were alternately deposited by amperometric methods (i-t); According to XRD results, it can be seen that the preferred planes of the as-prepared CuSe thin film is at (112) plane; SEM and EDS analysis indicate that the CuSe film is nanoscale short rod structure, and average atom ratio of Cu:Se is close to1:1. The band gap cauclated from ultraviolet transmission data is calculated to be2.0eV, and the CuSe crystals are domenstrated to have p-type semiconductor property.2. EC-ALD and codeposition of nanosemiconductor In2Te3on PI/COOH-CNTs composition membrane and photoelectric property researchesThe In2Te3thin films were prepared on PI/COOH-CNTs membrane by EC-ALD (amperometric i-t technology) and codeposition (triple pulse current technology) process; Through the electrochemcial study of cyclic voltammetric behaviours to determine the deposition potential of and the underpotional of In and Te in the deposition process. Through XRD and EDS characterization, it is proved that the thin film deposited by EC-ALD is polycrystalline structure, while it is amorphous struture through codeposition process. The OCP and amperometric i-t researches under illumination and dark show that the as-prepared In2Te3thin films using these two methods are both p-type semiconductors, and it is very suitable for semiconductor material.3. Study of eledtrodoposition of Pd nanoparticles on PI/COOH-CNTs and PI/GE composite substrate and its catalytic performance research Pd nanocatalysts wree prepared respectively on the surface of PI/COOH-CNTs and PI/GE electrodes by electrochemical method. The CV results indicate that the electrochemcial behaviours of PdCl2solution on PI/COOH-CNTs and PI/GE electrodes were similar, and the current density on the PI/GE electrode is larger than that on the PI/COOH-CNTs electrode. According to XRD and SEM data, it can be observed that the Pd on two kinds of electrode materials are face centered cubic structure nanocatalysts, and the surface morphology are flower structure. Through electrochemical catalytic behavior research for formic acid, it is found that the Pd nanoparticles on the PI/COOH-CNTs/PI and PI/GE electrodes both have obvious catalytic oxidation properties for formic acid.