| Safety of power plants requires damage analysis, life monitoring, predictive maintenance of large high-temperature pipelines. And the key to on-line monitoring of high-temperature pipelines’life is a high-temperature strain gauge working at long time, high precision and high stability. At present, high-temperature strain gauge application such as PtW wire strain gauge, PdCr wire strain gauge and semiconductor thin film strain sensor are mostly of great transverse effect, thermal output, short life and expensive. Therefore looking for a high precision, good stability and low cost material for high-temperature strain gauge is very significant. This paper mainly researches about preparation, characterization, microstructure and electrical properties of TiB2 semiconductor thin film, which has a good prospect in high-temperature strain gauge in the future. Include the followings:1. TiB2 semiconductor thin film was prepared by magnetron sputtering methods, then structure and composition characterization were studied by SEM, EDS and XRD, the effect of sputtering time on film thickness was mainly inspected. Thickness of TiB2 thin film and sputtering time were linear relationship.2. Structures, electrical characteristics of as-sputtered film samples were researched by AFM, FPP. GF, TCR of TiB2 semiconductor thin film were studied by cantilever beam method and self-designed experimental device. Table view particles size of thin film samples grew while thickness increased, sheet resistance decreased when thickness increased, resistance rate did not change when thickness change.3. The as-sputtered thin film samples were under some heat treatments, structure, morphology and electrical properties were compared before and after heat treatment. Heat treatment had a result of crystallization of the TiB2 thin film, sheet resistance increased when temperature of heat treatment increased. |
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