Study On The Related Materials Of The CIS Thin-film Solar Cells

The bottom molybdenum electrode of CIGS thin film solar cells was studied firstly. Magnetronsputtering system was used in our laboratory, and sputtering power, argon pressure, target spacing andsubstrate temperature were changed. An appropriate middle argon pressure between the high argon pressureand the low argon pressure was chose. First two layers of molybdenum film structure under high argonpressure and low argon pressure was deposisted, then three layers of molybdenum film structure with thebridge Ar pressure was deposisted. And the two layers structure and three layers structure were compared,and we found three layers of molybdenum film could withstand more thickness, and when they have thesame thickness, three layers of molybdenum film have better adsorption. The X-ray diffraction （XRD）,scanning electron microscopy （SEM）, four-probe resistance testing and other testing were used to measure.CIS powder was used nitrate by solvothermal/hydrothermal route, the preparation temperature andother process on therials ande synthesis of CIS powder images were study. Copper nitrate, indium nitrateand selenium powder were used as main raw mat ethylenediamine was used as the reaction solvent in thereactor for the preparation of instruments to study the different reaction temperature, reaction time. Whenthe reaction time was set to18hours in160°C,180°C,200°C.180°C is the best preparation temperature,the reaction temperature is set to180°C in12hours,18hour,24hours,30hours,36hours of preparationtime, when the reaction time of30hours, the best pure images of the CIS powder was obtained.Due to its transparent and conductive. Transparent conductive film was used to the solar cell electrodematerial （bottom electrode and upper electrode）, and It is the best choice of the window layer, this paperexplores process of Nb₂O₅/Ag/Nb₂O₅, MoO₃/Ag/Mo/MoO₃transparent conductive films research,preparation instruments was the magnetron sputtering system. Hall tester, four-probe resistance tester,infrared-ultraviolet spectrophotometer were used to measure resistivity, the square resistance, andtransmittance. We have studied the properties of Nb₂O₅/Ag/Nb₂O₅multilayer prepared on quartz glasssubstrates by simultaneous RF magnetron sputtering of Nb₂O₅and DC magnetron sputtering of Ag.Multilayer transparent electrodes have much lower electrical resistance than the widely used transparentconductive oxide electrodes. Ag films with different film thickness were used as metallic layers. withthicknesses in the2nm<d<7nm range，The films went from an “island” structure at low thicknesses to a uniform structure at d>5nm, Optimized Nb₂O₅/Ag/Nb₂O₅films, with a luminous transmittance of85%,were found to have good electrochemical durability and may be useful for applications in electronic devices.Meanwhile, The properties of the multilayer films are studied at different substrate temperatures. Sheetresistance of the multilayer film decreased initially with increase of substrate temperature and increasedfurther with increase of substrate temperature beyond100°C. However, transmittance of the multilayer filmdecreased with increase of substrate temperature. Good transparent conductive film of sheet resistance6.7/sq and transmittance of85%was found at a substrate temperature of100°C. The observed property ofthe multilayer film is suitable for the application of transparent conductive electrodes.New transparent conductive MoO₃/Ag/Mo/MoO₃multilayer electrodes were prepared by simultaneousDC magnetron sputtering of Ag, Mo and MoO₃. An Ag film with different thickness was firstly used asintermediate metallic layers. The optimum thickness of Ag thin films was determined to be5nm for highoptical transmittance and good electrical conductivity. With about20nm thick MoO₃films and deposisted2nm Mo films, here the metal Mo film as the protective layer, then, the thickness of the upper and lowerMoO₃films was varied from5to30nm when the thickness of the silver films was set to be constant at5nm, The optimum thickness of MoO₃thin films was determined to be15nm. The multilayer showed highoptical transmittance in the visible range of the spectrum and had color neutrality. A high qualitytransparent electrode, having sheet resistance as low as5.7ohm/sq and high transmittance of90%at420nm and average transmittance in the visible range was about75%, was obtained and could be reproducedby controlling the preparation parameter properly. The above property is suitable as transparent electrodefor dye sensitized solar cells （DSSC） and CIGS solar cells.