Preparation And Performance Studying Of The Bi₂S₃Sensitized TiO₂Quantum Dot Solar Cell

As one of new source,solar cells have reached much attention nowadays for itscleanness low cost，and endlessness. In this paper，we accounted the rationale、structure、problem of the Quantum Dot-sensitized solar cell.We prepared solar cells using Bi₂S₃to sensitized TiO₂,and done some performance optimization working.As a kind of cheap and safe semiconductor material，TiO₂has been extensivelyinvestigated in the filed of solar cells．But it can’t absorb the solar effectively for its wideband—gap．One way to solve this problem is to use arrow band—gap semiconductormaterial to sensitize it．As non-toxic compound, Bi₂S₃with the band-gap of1.3ev and highabsorption coefficient on the order of105cm-1is a typical semiconductor material tosensitize TiO₂electroders.Three main parts were involved in the study：in-situ growth of Bi₂S₃onto thenanoporous TiO2films. Testing of the photoelectrochemistry of the photoelectrodes foundthat the increasing of deposition cycles,the amount of light absorptions increased,but therecombination of the electron-hole pairs becomed more serious,which resulted thephotocurrent density and the power conversion efficiency increased first but then reduced.Exploring the performance changement of the annealed and the ZnS treated solarcell.We found that the performance of the cell become better after annealed and the ZnStreated respectively.Use solid-state CuSCN as electrolyte and TiO2nanorod arrays to assemble solar cell.forstudying optical and electrical properties.This paper include the synthesis of the materials、assembling of the solar cell and theperformance of the cell.We also the reason of some phenomenon.