Cucro < Sub > 2 < / Sub > Membrane Preparation And Properties Of The Research

Thin films of transparent wide band gap oxide semiconductor that isTransparent Conducting Oxide （TCO） has wide applications Solar cellwindow layer, flat panel display, low radiation window, touch screen,aircraft and the refrigerators defrost window, gas sensors, antistaticcoating etc. So far, most TCO materials were n type, that p type reportsrarely. In1997, Kawazoe et al. first reported that the delafossite structureoxide CuAlO2film is a p-TCO, which initiated extensive attentions aboutthe materials. Mg-doped CuCrO₂film prepared by Tate et al has aconductivity of220Scm-1which is the highest conductivity in p-typeTCO. Recently, CuCr1-xMgxO2films have been studied extensively toobtain relatively high conductivity and optical transparency in thevisible spectrum. Some studies on transparent p-n junctions such asCuAlO2/ZnO, CuYO2/i-ZnO/ITO and p-CuCrO₂: Mg/n-ZnO and so on.This paper using chemical solution method （CSD） successfulpreparation of single-phase CuCrO₂polycrystalline block, bycomparing the morphology of experiment results can be seen CuCrO₂polycrystalline block has the obvious layer growth properties. Theintroduction of the impurities Mg effectively lower the crystallizationtemperature of polycrystalline material, the temperature of thecrystallization improved preparation for low temperature growth film layan experimental basis. After the same temperature processing, alongwith the increase of doping concentration Mg, the crystallinity ofdegradation, particle becomes small by comparison of the sample themorphological features. And different Mg of doping concentrationCuCrO₂film was successfully achieved by the chemical solutionmethod on single crystal Al2O3substrate. The CuCrO₂films were highlyc-axisoriented by changing the temperature parameters, and analyzed the effect of Mg concentrations on the structural, morphological,electrical and optical properties was investigated. Highly transparent≧70%Mg-doped CuCrO₂thin films with p-typeconduction and semiconductor behavior were obtained. Themicrostructure of the systems was characterized by scanning electronmicroscopy and the roughness increased as the content of Mgincreased. In this paper, CuCr0.95Mg0.05O2film have the lowestresistivity of7.34?cm with direct band gap of3.11ev. In order toinvestigate the conduction mechanism, the energy band of theCuCrO₂films is constructed based on the grain-boundary scattering.The effect of substrate induced strain in polycrystalline CuCrO₂thinfilms on different substrate, e.g., Si（111）, sapphire （001）, ITO/glass, quartzand glass deposited by pulsed laser deposition （PLD） to prepared goodperformance of film. We have also studied the structural, electrical andoptical properties of CuCrO₂on Si（111）, sapphire, ITO/glass, quartz andglass substrates. There exists a trend of the crystallites to decrease in sizewith increase in strain for the polycrystalline substrate. The direct opticalband gaps is3.15eV,3.08eV,3.1eV and3.06eV for ITO/glass, sapphire,quartz and glass substrates, respectively. Our results indicate that theCuCrO₂film on ITO/glass substrate is having the largest band gap of3.15eV and the lowest barrier Φb value of39meV. It also showed a newopportunity for the fabrication of hybrid CuCrO₂/ITO/glassoptoeletronic devices.