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- Based On Multi Nanorods Dielectrophoresis Assembly Process Technology Research

Posted on:2013-05-09Degree:MasterType:Thesis
Country:ChinaCandidate:R ChenFull Text:PDF
GTID:2241330371468388Subject:Circuits and Systems
Abstract/Summary:PDF Full Text Request
Firstly, multi-segmented Au-Ag-Ag nanorods were growth by electrochemical depositionwith different kinds of electrolytes. Furthermore, in order to get the 300nm gap, we adopt thewet chemical method. In this way, NaOH can remove the silver apartment completely.Electrical character testing and DEP is the goal of this project. So, fabricating the metalelectrode was going on as the following step. The UV lithography, lift-off and Electron BeamEvaporate were used in this process to get the electrode, the narrowest spacing of which is4um width on silicon wafer coating with SiO2. Then the DEP experiment was carried on forassembling the 20nm Au nanoparticles in 300nm nanogap. After a series of this repeatedexperiment with different parameter, we got the following inclusion: 1) when the Vpp is 3V,and the assembling time is 22 seconds, we get the independent Au nanoparticles with asuccessful assemble; 2) when the Vpp is below 3V, we can not get successful assemble evenwith a very long assembling time; 3) when the Vpp is over 3V, we still can get successfulassemble, but we also note that the Au nanoparticles is melting. So far, we showed a new DEPtechnology with the nanogap which can be adjusted during the growth of multi-segmentnanorod. Based on the phenomena that Au nanoparticles were melt on the high voltage, wedeveloped this new technology in the application of Single Electron Transistor (SET). On thisthesis, we hope it is possible to get the SET by locational melting between the nanoparticlesconnection junction. Finally, we showed the schematic we expect.
Keywords/Search Tags:Multi-segmented Nanorods, Dielectrophoresis (DEP), Single Electron Transistor (SET)
PDF Full Text Request
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