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The Preparation Of Gan Nanowires And The Theoretical Research Of The Electrical Properties

Posted on:2013-03-01Degree:MasterType:Thesis
Country:ChinaCandidate:Y YangFull Text:PDF
GTID:2241330374471782Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Gallium nitride (GaN) is one of the world’s most advanced semiconductor material with a direct and wide bandgap, which has numerous excellent properties, such as high electronic mobility, high thermal conductity, chmmical stability and stable mechanical properties, Moreover, the one dimensional GaN material with favorable properties and captivating prospect in the preparation of nanometer-size devices has attracted more and more attention.In this paper, the dimensional GaN materials are prepared on Si(110) wafer with two step methods including the Sol-Gel method and high temperature ammoniation method, which is very simply, low-lost and doped uniform. The sol precursor was synthesized by Ga(NO3)3as Gallium source, crtric acid as complexing agent, Ni(NO3)2as catalyst, and the dimensional are prepared by changing the substrate surface. Then its microstructure and properties are analyzed and studied. The results indicate that the one-dimensional GaN material is synthesized successfully with Ni(NO3)2as catalyst; the one-dimensional GaN material prepared in the ZnO buffer layer is matching with the Si substrate well; ammoniation temperature is important to the microstructure of GaN material; TEM shows that samples have very good crystalline quality, EDS proves that it is in line with VLS growth mechanism; XPS indicates that Al element successfully mixes with GaN, and the sample exists Ga-N bonds; the field emission performance shows that the current of no doped GaN nanowires is bigger than the doped GaN nanowires.The electrical properties of the ideal GaN nanowires and the Al doped GaN nanowires have be studied with the density functional theory of primary principle. The results show that the band gap of GaN nanowires become wider compared with bulk material. The electrical properties studies that the power function of pure GaN nanowires is smaller than doping GaN nanowires’s, it is useful to field emission current, other electrical peoperties change a little.
Keywords/Search Tags:Sol-Gel, one-dimensional GaN, field emission properties, Density functionaltheory
PDF Full Text Request
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