Zinc And Titanium Neodymium Acid Barium Niobate Microwave Ceramics Sintered At Low Temperature

Microwave dielectric ceramic devices should constantly reduce the size in order to meet the requirements of miniaturization and integration of mobile communication devices,and the multi-layer and thin film devices is an effective way to solve this problem.on the one hand, the key technology of achieving the multi-layer structure devices is making microwave dielectric ceramics in low sintering temperature, achieving low-temperature co-fired with Ag, Cu metal electrodes.on the other hand, microwave ceramic materials shoud have high dielectric constant and low loss to meet the demand of target of thin film devices.ZnNb2O6microwave dielectric ceramics has excellent microwave performance and lower sintering temperature, it is a potential of Low-temperature sintering material.Ba6-3xNdg+2xTi18O54(x=2/3) microwave dielectric ceramics has much high dielectric constant and low loss, it is one of making ceramic thin film capacitor materials.in this paper,The effect of TiO2addition on increasing the dielectric constant and improving the temperature coefficient of resonant frequency of ZnNb2O6microwave dielectric ceramics has been investigated.and the influence of process conditions on microwave dielectric properties of this ceramic has been investigated for seeking the best preparation conditions.and then adding the softening temperature of the glass material to reduce the sintering temperature.In addition, The effect of Bi2O3addition on increasing the dielectric constant Ba6-3XNd8+2xTi18O54(x=2/3) ceramic materials has also been investigated in the paper.By the experimental study, found that the dielectric constant and temperature coefficient of resonant frequency of ZnNb2O6improve by adding TiO2,and ZnNb2O6microwave dielectric ceramics has excellent microwave performance when the proportion of TiO2and ZnNb2O6is1.8(ZN-1.8T)and in the proportion the ceramic materials with a good microwave dielectrics properties ofεr=51.55, Qxf=11395, τf=-8ppm/℃. In the following experimental,the sintering temperature of ZN-1.8T ceramic reduce from1200℃to1000℃belowby adding four different formulations of low-temperature glass, the sintering temperature of the ZN-1.8T materials decreased most significantly by adding Bi2O3-ZnO-B2O3-Al2O3glass, and the sintering temperature of sample Adding10wt%and15wt%this glass can be able to compact at 950℃,and the microwave dielectrics properties of the sample of Adding3wt%this glass and sintering at1000℃is εr=46, Q×f=4700(4.7GHz). the lower sintering temperature of ZN-1.8T material is not very significant by adding MgO-B2O3-SiO2galss, Li2O-B2O3-SiO2-CaO-Al2O3galss and BaO-ZnO-B2O3glass,the sintering temperature must up to1000℃. And the dielectric loss of ZN-1.8T materals ofadding10wt%MgO-B2O3-SiO2galss and10wt%Li2O-B2O3-SiO2-CaO-Al2O3galss is0.00067(5.4GHZ) and0.00047(5.3GHZ).On the other hand,the additives of Bi2O3can some extent improve the dielectric constant and reduce the sintering temperature of Ba6-3XNd8+2xTi18O54(x=2/3) ceramics.In Ba6-3xNd8+2xTi18O54(x=2/3)system ceramics,when the value of y is0.5, the dielectric constant can be increased to103,but additives of Bi2O3can rise the dielectric loss and worsen its microwave dielectrics properties.