Based On Cmos Mems Technology Of Pzt With Circuit Output Power Collector

Due to the rapid development of microelectronics technology so that powerconsumption of chip is small enough, has reached the level of the micro, the nanowatt.The system is also in milliwatt magnitude. Therefore the idea that vibration energy ofthe surrounding environment is converted to electricity and collected is put forward andit is possible to provide energy for systems. In this paper, PZT energy harvesting basedCMOS and MEMS technology with the output circuit is researched. Sol-Gel processmethod is used to make PZT piezoelectric thin film which can convert vibration energyto charge using the piezoelectric effect, and power signal is harvested through therectifier circuit and the energy storage capacitor. the ratio of raw materials and thelattice structure of the prepared PZT powders is analyzed using XRD, the resultsshowed that the prepared PZT powders annealed at700℃posses perovskite structureand powder particle uniform dispersion. Surface morphology and cross section structureof PZT thin films is analyzed by XRD and SEM. The results showed that surface of thePZT thin films prepared at700℃with500nm thick has crack-free and flatness better.The chip of the PZT energy harvesting is fabricated using PZT thin films and siliconcantilever structure, which is tested using measurement circuit. On account of themeasurement data, the PZT energy harvesting measured performance of0.74μWeffective electrical power and3.93V DC output.