| The high-end, special semiconductor discrete components exist technical difficulties for integration and miniaturization, so they still have a large discrete space as the most dominant research hot spot in discrete semiconductors planar process manufacturing technology. This paper completed a design for manufacturability of the semiconductor current regulative device for the LED energy saving module.The silicon current regulative device is based on the N-channel or P-channel field effect structure as the two-end fixed constant current device or three-end adjustable current device,which are usually called as Current Regulation Diode (CRD) and Current Regulation Triode (CRT). This device is used for constant current source, stabilivolt source, amplifier, and LED constant current driving circuit, and can drive the load directly, realize the function of constant current power supply.The breakthrough point of this paper is the influence factors of the CRD dynamic impendance, the constant current temperature coefficient and other key parameters. Through the technology level and the physical characteristics of the device level TCAD manufacturability analysis and design, the relationship between processing factors and processing parameters of the structure is introduced. With the items of the parameters, characteristics as a benchmark, finish the semiconductor current regulative device chips level process manufacture and device characteristics design optimization.This topic’s main job is based on the relationship between the characteristics and process structure parameters, determine the main attack direction of the research. Based on the research on the determination of the scheme in Sentaurus Process technology level simulation; Sentaurus Structure Editor in the environment of the grid optimization; Sentaurus Device for the device physics characteristic simulation; Based on the Inspect, Tecplot SV and Sentaurus WorkBench, this paper completed the semiconductor current regulative device design project for manufacturability, laid the process foundation of the feasibility for the wafer manufacture.The study set up Sentaurus Process technology level of design for manufacturing process based on the core of the scheme of DFM after the principle and theoretical analysis manufacturability design, and simulated the physical characteristics on the device level simulation by Sentaurus Device repeatedly based on the parameter selection and its amendment. Finally, the author used the batch optimization model for verification and optimization of this device characteristic curve and optimal product rate.The results show that, using the semiconductor devices manufacturability design tools (TCAD) for the silicon current regulative device chip level of design manufacture, we can acquire the very precious manufacturing level engineering scheme and the physical characteristics, virtual test data of current-voltage characters precisely. The study results possess maneuverability, and can be used as the important basis for the wafer manufacture. |
