Research On Collector Model And Structure Of SOI SiGe HBT

Strained SiGe technology changes the electronic and hole mobility, improves the device’s power consumption and frequency, by growing SiGe layer on Si materials to change the material’s lattice structure. On the other hand, SOI technology has the advantages of high-speed, latch-up free, low-power, radiation, and miniaturization. Therefore, the high-performance strained SiGe and SOI technology become the focus of modern devices. In this paper, we mainly focus on the folded-collector SOI SiGe HBT and the model of collector.Firstly, physical properties of strained SiGe materials and the advantage of SOI substrate have been analyzed, especially lattice structure, the band split and the critical thickness. Provides the theoretical support for the analysis of SOI SiGe HBT.Secondly, the basic working principle and performance of SOI SiGe HBT have been analyzed, especially the AC performance. on the basis of the above, the folded-collector SOI SiGe HBT is analyzed. The collector of the folded-collector structure simulation was done to decide the collector structure parameters, the performance has also been simulated, analyzed the process of the folded-collector structure.Finally, the model of collector has been analyzed, the model of BC SCR and collector depleted capacitance have been set up. In fully-and partly-depleted working model, the simulation and the effect on performance also been analyzed. The model of BC SCR and Depleted Capacitor built in the paper provides basis for the research of SOI SiGe HBT.