The Research On FE Simulation And Experiment Of Nanoindentation For The Crystal Characteristics Of Monocrystal Silicon

With the development of the science and technology and material preparationtechnology, the mechanical properties of the backing material, especially the materialphysical property retention in the processing and manufacturing of the demand inMicroelectronics, precision optical industry.etc is higher and higher. Silicon as a kindof good semiconductor material is the main supporting material of Microelectronics,precision optical industry.etc. It is widely used to make infrared, ultraviolet lightcomponents and the semiconductor substrate, especially plays a very important rolefor large scale integrated circuit board. In the infrared detection, high-energy laser,missile and spacecraft, etc it also get people’s more attention. Ultra-precisionmachining of single crystal silicon, often due to cutting force/polishing force causes,phase transformation can happen in the surface and the subsurface and even crack anddislocation can appear. It can lead to material mechanical damage on the one hand, onthe other hand lead to material physical properties change, which affect itsperformance. So it is necessary to research deformation damage failure of mechanicalaspects of silicon, especially phase transformation and other physical properties. Inthis paper, we study the crystal characteristics of the monocrystal silicon and its thinfilm through the nanoindentation simulationFirstly, the research background and status of the monocrystal siliconnanoindentation technology and the phase transformation of silicon in the progress ofnanoindentation were introduced. The relationship between the elastic modulus of themonocrystal silicon and its internal strain was determined through summarizing thestress and strain of the silicon in different phases and the pressure induced phasetransformation. The anisotropic constitutive model of silicon which is suitable forstudy the internal phase transformation of the monocrystal silicon in nanoindentationprocess was established in combination with monocrystal silicon mechanical parameters. The finite element software Marc secondary development process wasintroduced and the silicon anisotropic constitutive model coupled into Marc finiteelement software used in nanoindentation simulation through the subroutine.The three-dimensional anisotropic silicon finite element model was establishedusing the finite element software MSC. Marc and the software secondarydevelopment were used for simulation analysis and calculation. Meanwhile,nanoindentation experiments were taken on monocrystal silicon (001). Thedeformation mechanism of Monocrystal silicon on different loads and the reason ofpop-out phenomenon were explained through nanoindentation experiments. Theload-displacement curves obtained during experiment and simulation were analyzedcomparatively, they fit great well, verified the correctness of the simulation model.Based on the simulation analysis of the monocrystal silicon, the mechanism of phasetransformation of silicon induced by pressure and the relationship between phasetransformation and pressure under the indentor obtained through the research ofnanoindentation process of monocrystal silicon phase transformation and the siliconinternal phase distribution. And then that the different crystal orientations influencedon the load-displacement curves was analyzed by the nanoindentation simulation ondifferent silicon crystal face. The depth on <100> orientation was largest and smalleston <111> orientation in the same load. The orientation of silicon has an influence onphase transformation obtained by comparing the difference of silicon internal phasetransformation.Finally, the load-displacement curves were compared though nanoindentationsimulation of silicon thin films on sapphire samples and the mechanical properties ofthin film system determined by both film and substrate material properties: the film isthicker, the mechanical properties of thin film system is closer to the property of thefilm material, otherwise, to the property of substrate material. The phasetransformation of silicon film in different film thickness on sapphire was researchedand the influence of the different film thickness and the substrate materials on phasetransformation of silicon and why it has an influence were summarized.