Device Simulation Of600V Power VD-MOSFET

The VD-MOSFET, short for the vertical double-diffused metal-oxide-semiconductor field-effect transistor. VDMOS has high input impedance, low input current, small drive power, simple drive circuit, high switching speed, good thermal stability, no second breakdown, and so on. It is heavily used in high voltage discrete devices and power IC, such as power supply, switch and electronic ballast. So it is a practical significance to design and simulate VDMOS.The domestic and abroad research situation of VDMOS is reviewed in this paper. The VDMOS’s structure and working principle are firstly studied. And then designed a VDMOS, which threshold voltage is from2.5V to3.0V and the breakdown voltage is600V according to semiconductor device physics. The square cell is chosen for the reason of silicon wafer utilization ratio and mask fabrication. And on this basis, the process flow and mask are designed and the technology simulation is conducted in this paper.Select the appropriate physical model, the transfer characteristic, the output characteristic and the breakdown characteristic of the VDMOS are simulated after the completion of the process simulation. And analysis the effect of external factors on the device features.The simulation results show that good output performances can be achieved for VDMOS, and the VDMOS’s breakdown voltage is738V, threshold voltage is2.8V, which has met the design requirement. Moreover, the VDMOS process present in this thesis is compatible with the current mainstream technology,which can facilitate manufacturing.