Studies On Antimony Contained Hetero-structure Opto-electronic Material And Related Physics

Recently, the research of antimony contained compound semiconductor hasbecome a new focus of the semiconductor optoelectronic devices and the frontier inthe field of condensed matter physics. It can be applied to many information functiondevices, such as the high-performance mid-infrared semiconductor laser, infrareddetectors and new type of transistors. Also, it has important value in infrared remotesensing, molecular spectroscopy detection and modern communication aspects.In this paper, the quantum real space transfer (QRST) of theGaAsSb/AlInAs/AlAsSb hetero-structure and the short-wave infrared detectionmaterials and devices of InGaAs/GaAsSb/InP Type II superlattices (SLs) areinvestigated. The main contents are listed as follows:The theory of QRST was calculated and verified by the shooting method andtransfer matrix method, respectively. The parameters of the Step-Well structure wereoptimized, and then some novel structure such as the W type and M type wereproposed.The QRST material with designed structure was prepared with the molecularbeam epitaxy system. And several analyzing and testing means were carried out tocharacterize the as-prepared samples. Finally, the high quality QRST material wassuccessfully obtained.The energy band structure of InGaAs/GaAsSb Type-II SLs short-wave infraredmaterial was calculated using K.P theory of Kane, and the relationship between theenergy band and the wave vector and the thickness were obtained as well. In addition,on the basis of the theory calculation, the P-I-N structure of the InGaAs/GaAsSbtype II SLs was designed.The high quality material of the Type II detector was successfully prepared.Then, the photomasks to prepare the single element devices were designed andfabricated, then the preparation process were investigated and optimized. At length,the single element devices were successfully fabricated and tested at roomtemperature. Results show that the cut off wavelength is2μm, and the dark current density is the2×10-9A/cm2under the inverse bias of0.05.