Terahertz Dynamical Investigation Of Semiconductor Quantum Well In Microcavity

Optical absorption investigated of semocinductor quantum well is the hotspotof theory and experiment. The optical absorption spetrum shows many intrestedphenomenon for the terahertz field is applied in semiconductor quantum well system. Inthis paper, we discuss the optical absorption properties of quantum well in the present ofterahertz field based on stationary single-photon schrodinger’s equation andself-consistent density matrix theory:(1) Optical absorption properties are investegated for the semiconductorquantum well drived by intense terahertz field. When the terahertz field tuned thequantum well, the replica peak emerge in the optical absorption spetrum. Increasing thefrequency of terahertz field to resonance frequency, the A-T splitting emerge in theoptical absorption spetrum. In addition, if the decay rate is tuned to0meV, the opticalabsorption spetrum shows a electromagnetic induction phenomenon of transparent. Thetransparent windows is increased with the increasing of the coupling constant betweenthe terahertz field and the quantum well.(2) Optical absorption coefficients are computed for the asymmetric doublequantum well drived by a resonance terahertz field and a varied terahertz field based onself-consistent density matrix theory. The researches show that the first A-T splittingand the second A-T splitting emerge in the optical absorption spetrum for inceasing thestrength of varied terahertz field when fixed the resonance terahertz. When the variedterahertz is fixed, the left main absorption peak occurs red shift and the right oneemerge blue shift for increasing strength of the resonance terahertz.(3) The A-T splitting and quantum confine Stark effect of the sideband peaksare reseached for asymmetric double quantum well drived by an intense terahertz field.The results show that the absorption main peaks of1s,2s/p emerge splittingphenomenon, and the sideband peaks which correspond to the exciton peaks are alsosplit when the strength of terahertz is increased. Furthermore, when adding a dc fieldinto the semiconductor quantum well which driven by an intense terahertz field. Thesideband peaks occur the redshift and the blueshift phenomenon with incresing the dcstrength. Interesting sideband peaks properties will be guidance for the further study ofthe experiment.