Studies On The Fabrication And Properties Of V-doped Titanium Oxide Thin Films

Uncooled infrared detectors have been paid considerable attention during the pastdecades. The choice and property of heat sensitive material is one of the mostimportant issues since it’s the core of the detectors. Recently, titanium oxide (TiOx)thin films has become a high-profile functional material due to its good thermalstability, chemical stability, wide band gaps, non-toxic, low cost, high refractive indexand the excellent properties of convenient preparation. This paper, we focus on theoptical and electrical properties of TiOx film from two aspects:experimental andtheoretical respectively. TiOx film were deposited by dc magnetron sputtering system,studied the influence and contact of preparation condition on its thermal properties,optical properties and microstructure, mainly. The research content of this paperincludes the following aspects:(1) The effect of sputtering power on the microstructure and properties of TiOxfilms has been investigated. The results show that sputtering power have a greatinfluence on thickness of the films. With the increasing of sputtering power, theparticles which are sputtered had greater energy so they can deposited faster, hadsmaller transmittance, optical band gap, resistivity. At the same time, the sputteringpower had little effect on the films’ TCR.(2)We fabricate TiOx films at room temperature and analyze its micromechanism and electro-optical properties. The experiment result shows that the filmsare amorphous, and have smaller optical band gap. Because of the preparation processthe amorphous TiOx thin films have many defects, low electron mobility, highresistivity but low activation energy which cause smaller TCR.(3)We dope vanadium in TiOx thin films and study the change of their micromechanism and electro-optical properties in different doping conditions. Vanadiumdoping does not change the crystal structure of TiOx thin films but promote the films’crystallization. Doping can improve the TCR of TiOx thin films to a certain extent.Vacuum annealing can decrease the resistivity and TCR of TiOx thin films whileoxygen annealing can increase them.