Nonlinear Optical Effects And Optimal Design Of Silicon Waveguides

The pursuit of information transmission and receiving is becoming more andmore strict, which drives the high-speed progress of photonic integration and opticalcommunication technology. While optical waveguide devices have been animportant support for these and its development promotes the improvement ofinformation technology. Over the past decade, great success has been realized forsilicon waveugides, especially on the research of nonlinearity, which stimulates thedevelopment of integrated optical devices. This paper focuses on the dispersionproperties, nonlinear process of femtosecond pulse and broadband mid-infraredwavelength conversion in silicon waveuigdes. The main results and innovation ofthis paper are summarized as follows:1. Research background and significance of nonlinear application of siliconwaveguides were analyzed comprehensively. The performance of several nonlinearwaveguides was compared thoroughly. We also introduced the recent development athome and abroad.2. The dispersion properties of SOI waveguides with several common heightswere discussed. The theoretical results show that the position of zero dispersionwavelength and lower-order and higher-order dispersion can be flexibly tailored bymodifying the ratio between width and height, cross-sectional areas and etchthickness.3. Polarization theory of silicon waveguides was discussed in detail, includingall nonlinear effects. The transmission equation of optical pulses was derived fromthe polarization theory. The effects of free carrier, dispersion properties and initialchirp on ultrashort pulses transmission have been described based on thetransmission theory. The results show that all parametric play a critical role on theoutput waveform of pulse, including pulse fission in time domain and spectralbroadening.4. Dual-slot silicon waveguide was proposed based on single-slot waveguide.A flat and low dispersion over a1098-nm bandwidth was exhibited using thedual-slot silicon waveguides, which can be optimized by changing height, width andslot thickness of waveguides. Phase-matching condition in FWM was explored in detail. The dual-slot waveguide was used to generate supercontinuum withbandwidth extending up to1630nm pumped by femtosecond pulses.5. Silicon-on-nitride waveguide was proposed to be used in mid-infraredwavelength conversion and conventional Schr dinger equation has been slightlymodified as well. The bandwidth of continuous and discrete wavelength conversionhas reached2.31μm and4.84μm, respectively. Wavelength conversion betweenMWIR and telecommunication wavelength can be realized by using SONwaveguide.