The AlN Thin Films Prepared By RF Magnetron Sputtering And The Study Of Properties

AlN thin films have a lot of good performance other metal oxide films of III-V B family doesn’t have. AlN thin light-emitting devices with sensitive devices, high-power and high temperature electronic devices, nanometer technology, microelectronics technology, acoustic technology, multi-layer film composites and other fields have a wide range of applications. Therefore, the high-quality aluminum nitride films prepared and studied its characteristics has a very important practical significance.In this paper, the AlN thin films were prepared on glass substrates with RF magnetron sputtering method by the domestically produced OLED multi-coating systems through directing bombardment AlN Target Preparation film and changing sputtering conditions many times such as total working gas pressure, flow ratio of oxygen and argon and so on. The purity of AlN target material selected is99.99%. Finally we have deposited excellent preferred orientation of AlN thin film samples under the process conditions of the total gas pressure of1.OPa, the substrate temperature of200℃and230W sputtering power. Then the deposited high quality thin film samples were annealed respectively30min at600℃and800℃. The results of XRD analysis of the film surface unannealed and annealed at600℃and800℃scaned by D/Max-rB rotating anode X ray diffraction show that AlN thin film has its preferential growth direction, crystallizing better and crystal grain bigger after annealing at800℃. The results of AlN film surface unannealed, annealed at700℃and800℃scaned by the Nano Scope III type atomic force microscope show that AlN thin film surface annealed at600℃did not change significantly, grain size small.The surface annealed at800℃was relatively more smooth, the grain size relatively bigger, grain recrystallizing and crystallinity better. Using Germany SENTECHSe400laser ellipsometer samples before and after annealing the film refractive index, after annealing, the refractive index of the film increases from the annealing before added2.115to2.365. Quanta200scanning electron microscope component analysis, film samples derived from the energy spectra close to1:1ratio of N elements and Al elements in the sample.