Research On Preparation And Performance Of Aluminum Doped Zinc Oxide Transparent Conductive Films On Amorphous Silicon Substrate

ZnO:A1（AZO） transparent conductive film, an important optoelectronicinformation material, has been extensively studied and applied due to its manyadvantages, such as non-toxic, low-cost, high thermal and chemical stability, and theoutstanding optical and electrical properties.No matter the transparent electrode of amorphous silicon/crystalline siliconheterojunction solar cells, or the composite back electrode of amorphous silicon thinfilm solar cells, the current research mostly focus on properties of AZO thin film,ignoring the influence of AZO deposition process on a-Si layer and their combinationperformance. In this thesis, we used RF magnetron sputtering technique to prepare AZOthin film on amorphous silicon, and related characterization techniques were utilized toanalyze their properties. The technological parameters were optimized by studying theinfluence of sputtering power and deposition temperature on the properties of AZO andamorphous silicon thin films. Subsequently, H₂was doped into sputtering ambient forfurther improving the performance of the AZO thin films, and the effects of dopingcontent of H₂and deposition temperature on AZO film properties were studied. Finally,the reflection-enhancing effect of AZO thin films with different thicknesses and thecontact characteristics between AZO and n-a-Si films were analyzed.The results show that increasing the sputtering power can improve thecrystallization quality and conductivity of AZO thin films. However, exorbitantsputtering power can cause physical damage on the AZO thin films and increase theresistivity, and also the thickness of amorphous silicon thin film can be decreased. Withthe deposition temperature increasing, samples both H₂doped and undoped show asignificant downward trend in resistivity. At the same deposition temperature, theresistivity of AZO thin films with1%H₂content was significantly lower than that withpure Ar gas. Different from250℃, the reducibility of H atoms is relatively low at100℃.Therefore, the effect of corrosion on the film was weak, and the phenomenon of surfacecracking has not occurred. AZO thin films with the lowest resistivity (0.88×10^-4Ω·cm),which was one fifth of the sample deposited without H₂under the same conditions, wasprepared with H₂content of4%. The contact characteristics keep good after inserting anAZO layer into a-Si film and Al. With the thickness of AZO increasing, the contactresistance between the AZO and n-a-Si decreases gradually. AZO/Al composite backelectrode owns obvious reflection-enhancing effect.