Reseach On Semi-solid Die Forging Connection Of Al-Al Composites

The parameters of SiC/2024Al composites thixoforming and getting the emi-solid2024aluminum alloy were investigated in this experiment.Forming technology of semisolid die forging connection btween SiC/2024Al composites and2024Al were studied further baced on the best thixoforming parameters. Mechanical properties were measured by tensile test,and the microstructure and the interface behavior of joints brazed were observed by scan electron microscope and energy dispersive analysis.Through the experements conclusions gained are as follows:When the temperature is constant, the holding time reaches a certain excessive increase in holding time will only increase grain ball effect was not obvious.Therefore slightly higher temperature and appropriate to shorten the holding time can get the best semi-solid structure. The best parameters of geting the semi-solid2024AL were620℃-630℃,and the holding time were10min. The best heating rate is lmin/mm.In this parameters, the good ball of solid particles by the liquid phase surrounded by a good semi-solid structure. The tensile strength of the part he thixofo,rming made. in this parameters were298.56MPa.in the non-heat treatment condition.In the semi-solid thixoforming experements of the SiC/2024Al composite,conclusions gained are as follows:the Microstructure uniformity and mechanical properties increase with the forming temperature increase.With increase of forming pressure the mechanical properties increase first and then decrease.The the mechanical properties reaches the highest when the temperature get630℃,the forming pressure get400MPa,value337MPa.Through the semi-solid connection forging process,the part contain two different materials were Successfully made,and the strength of interface were enough high,its nly a little lower than the strainth of the part of aluminum.the strength of interface reaches the highes when temperature get630℃,the forming pressure get400MPa value337MPa.through the microstructure,the SiC near the interface show an unevendistribution.