The Research Of Preparation And Performance Of Piezoelectric Thick Film Prepared By Screen Printing

In this paper, low-temperature sintered piezoelectric thick films were prepared onAl₂O₃and the stainless steel substrate by using a screen printing method. At first, Wechosed the piezoelectric material with the composition0.25PZT-0.75PLZT, Al₂O₃substrate and studied the influence of the layers of thick films. We found that: As theincreasing of thick-film layers, the performance of thick film materials presenteddecreased after increasing.On this basis, we studied the influence of the content of sintering aids and theannealing holding time. The results show that: the optimum addition ratio of sinteringaids is3%, and the optimum annealing holding time is90min.At the same time, westudied the influence of the thickness of the substrate and thick film sinteredAtmosphere on the performance of PZN-PLZT thick films. Bscause of the differencein coefficient of thermal expansion, substrate can not be too thick. So the optimumthickness is0.1mm,and films are annealed in air. And then, The article also discussesthe influence of polarization process, and the best polarization conditions are that:130°C、6kv/mm、1min.Due to the high sintering temperature of the PZN-PLZT system itself, We did notget low-temperature sintered thick films. For PNN-PZT system, the optimumsintering temperature is1050°C.During the experiment, We studied the influence of synthesis temperature of thepowder, milling time and the sintering temperature of the thick film on theperformance of films which prepared on Al₂O₃substrate. Thick films sintered at lowtemperature were prepared, and thick film sintered at700°C can be realized.Subsequently, the performance of thick films which prepared on stainless steelsubstrate had been greatly improved.We get the best preparation programs: after the optimization of the process:synthesis at900°C,milling for6h,3wt%of sintering aids and annealed at800°C for60min.The polarization condition is130°C、6kv/mm and1min. The best performance offilms: ε₃₃^T/ε₀=2509，tgδ=1.65%，d₃₃=138pC/N，g₃₃=62.2×10^-4（V/N）.