Design, Synthesis And Properties Of N-type Semiconductor Metallic Polymer

In this thesis, a series of n-type organic semiconductor materials have been synthesized.The structures and performances of the materials are as follows:1. A series of polymers and dimmers which contain9,9-dicyanoethyl fluorine groups havebeen synthesized and characterized. The LUMO levels of the polymers and dimmers arebetween-3.62eV and-3.75eV. The optical band-gap of the polymers and dimmers can becalculated from the UV-vis absorption of the films, which are between1.84eV and2.02eV. Allof the polymers and dimmers have good solubility in the common solvents, exhibiting that thematerials can be applied in wetting processing.2. A series of copolymer have been synthesized which contain the fluorenedithiopheneblocks and benzodiazepinthiophene blocks. All of the copolymers have good solubility incommon solvents. The initial decomposition temperatures of the copolymers tested by TGAare282℃,333℃,332℃,321℃,323℃,331℃and334℃, respectively. It exhibited that thecopolymers have good thermalstability. The properties of the optical physical were studied bythe absorption of the UV-vis and PL emmision of the solution and film of the copolymer. Theoptical band-gap can be calculated from the UV-vis of the films of the copolymers, which arebetween1.36eV and2.10eV.3. The dimmers which contain platinadiyne and perylenediimide in the backbone weresynthesized and characterized. The band-gap can be well tuned through the variation of thenumber of thiophene in the moleculesar main chain. The optical band-gap can be calculatedfrom the UV-vis of the films of the dimmers, which are1.47eV and1.38eV, respectively. It isshowed that the band-gap of the dimmers decreased with the increasing of the number ofthiophene. The two dimmers have a good solubility in common solvents and goodthermalstability. The HOMO and LUMO levels calculated from the electrochemical tests are-5.59eV,-5.40eV and-4.17eV,-4.18eV, respectively. OFETs devices based on the two smallmolecules are fabricated by spin-coating, results exhibited that the dimmers possessedambipolar properties and the mobilities of hole up to1.35×10-2-0.158cm2V-1s-1and2.40×10-3-5.46×10-2cm2V-1s-1for electron in ambient, respectively. The results exhibitedthat the two dimmers can be served as single component applied in organic filed-effecttransistor.