Preparation, Characterization And Luminescent Properties Of Zn_1-xMg_xO Nanomaterials

Zinc oxide as a member of Ⅱ-Ⅵ direct band-gap semiconductor, has a wideband gap. At room temperature, the band gap of ZnO is about3.37eV, and the excitonbinding energy can be as high as60meV. Duo to its excellent optical performance,ZnO has become the focus in most of countries in a decade. ZnO is one of the best toproduce the next generation of short wavelength light-emitting device.As the ZnO semiconductor materials research continued to achieve outstandingresults, ZnO-based devices, especially in the field of optoelectronic devices madegreat breakthrough. Scientists have developed surface acoustic wave devices （SAW）by the use of ZnO. Because of the special conduction mechanisms of oxygenvacancies in ZnO, It can be also used to produce the oxygen sensor and so on.Adding Magnesium to ZnO and adjusting its content can increase the band gap ofZnO. It has more advantage over other nanomaterials in the photoelectric devices,especially in the field of semiconductor laser device.In this paper, the present preparation of ZnO one-dimensional nanomaterialsbased on the method and doping had been summarized. ZnMgOmicro-nano-dimensional-shell structure was successfully prepared by the method ofCVD. Its properties were characterized and tested. Also the formation mechanismand its photoluminescence properties were discussed. The main results of which areas follows:1. ZnMgO micro-nano-shell structure were prepared by the method of chemicalvapor deposition with one step of heating. The diameter is from100nm-2μm.Both inside and outside shell walls are attached to nanoparticles. As thetemperature increasing, small particles will grow in one direction with the trendgrowth of short nanorod.2. ZnMgO nanomaterials with the shape of radiation and rod were prepared by themethod of chemical vapor deposition with two steps of heating. Then thelight-emitting properties of ZnO nanomaterials doped with Mg were studied bymeans of light stimulating. Measured by changes in the emission peak position,the luminescence mechanism of this material may be investigated.3. The samples grown on Pt/TiO₂/SiO₂/Si substrate coated Pt electrode, tested theI-V curve which showed the bipolar resistive switching effect, the RH/RLis between35to48, the VResetand VSetis not too large. In addition, detailedlyanalyzing the transforming mechanism between HRS to LRS.