Finite Element Analysis Of The Contact Of Nanowire/Metal

Metal electrode/nanowire contacts are an important part of nanoscale devices, which usuallyhave a decisive impact on the device performance when they are good or bad. Thus the metal electrode/nanowire contact research has an important significance, but also the current hotspots. Finite elementmethod is a widely used numerical method for the analysis of various physical problems currently.Compared to the experimental method, numerical simulation methods have their unique advantages.Using numerical simulation method can study the problem quickly, while avoiding the introduction ofunnecessary errors interference, and conducive to a better understanding of the physical nature of theprocess. In this paper, the finite element method, based on quantum correctted fluid model of the metal-semiconductor-metal model was simulated on geometric factors such as the contact electrode spacing,contact width, diameter of the nanowires and others, as well as nanowire doping concentration of thematerial itself, the different the contact barrier, etc., and a detailed analysis of the impact of variousfactors take zinc oxide for example were carried out.The main contents include four parts: The first chapter describes the background and basicsarticle. Including Schottky foundation, the basic model and variety of commonly used methods foranaloging semiconductors and scopes of their applications. The second chapter describes in detail thebasic steps of simulation. The hydrodynamic model of quantum correction, the use of adaptive meshingmethod, Galerkin method for unit analysis, and the final iterative method to solve it. The third chaptertake zinc oxide for example, analyzed the specific electrode spacing from the contact, the contact width,and diameter of the nanowires in terms of the impact of the geometry factor. For the Schottky barrier, the smaller the distance, the greater the impact of the contact; contact width larger, relatively smaller due tothe contact; smaller the diameter of the nanowires, the greater the impact of the contact. Chapter IV,analyzed the different performance of the device changes from the doping concentration and the Schottkybarrier, respectively. The higher doping concentration, the Schottky effect is smaller, it also showing thatthe turning trend form the Schottky contact to the ohmic.