Influence Of Temperature On Electrical Properties Of Individual ZnO Nanobelt

One-dimensional ZnO nanomaterial has shown great potential for applications in nanooptoelectronic devices and other fields. Its manufacture and application is the focus in the world. Because of surface effect, the electrical properties are influenced by environmental, temperature and illumination significantly. The research on temperature dependence of the resistance of individual ZnO nanomaterials is helpful to understand the electronic transport properties of one-dimensional nanostructures.ZnO nanobelts and In doped ZnO nanobelts are manufactured by chemical-vapor-deposition (CVD), which characterized by SEM, EDX, and PL.The micro-grid template method was used to fabricate micro-electrode for ZnO device. It is a low-cost and easy fabrication method. With preparation techniques gradually established, the success rate of Ohmic contacts between metal micro-electrode and ZnO nanowire is greatly improved, which provides a reliable method to fabricate electrode for detecting the electric performance for ZnO nanomaterial. According to the temperature dependence of the resistance of the single ZnO nanobelt, it was found that there are two different conduction mechanisms for the single ZnO nanobelt from20K to280K. In the higher temperature range (130K-280K), the thermally activated conduction is dominating. However, as the temperature coming down (<130K), the Nearest-Neighbor Hopping conduction mechanism instead of the thermally activated conduction becomes the dominant conduction mechanism through the single ZnO nanobelt. For the single In doped ZnO nanobelt, the thermally activated conduction is dominating in the higher temperature range (140K-290K). In lower temperature range from80K to130K, Nearest-Neighbor Hopping conduction mechanism is the main transport mechanism and Mott variable range hopping conductivity is dominating for temperature from20K to70K.