The Gas Phase Growth And Physical Property Research Of Mg_xZn_1-xO Nanowires

ZnO is a direct band gap semiconductor with a wide band gap of3.37eV and a large excitation binding energy of60meV at room temperature. ZnO has become important functional materials due to its the unique nature of the near-ultraviolet emitting, optical transparency, electron conductivity and the piezoelectric properties. MgxZn1-xO is a novel Ⅱ—Ⅵ group wide band ternary compound semiconductor material, which is continuously adjustable bandgap and taking into account the properties of ZnO and MgO at the same time. Therefor, the luminescence properties of Mg-doped ZnO nanostructures prepared under low temperature conditions has become a focus problem.Large scale ternary MgxZn1-xO alloy nanowires has been successfully synthesized on Si substrate with Au seeds by one-step chemical vapor deposition(CVD) method, the vapor-solid mechanism was demonstrated because the non-catalyse growth process. The way of heating was redesigned lead to growth process and component proportion easily controling. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence (PL) were systematically carried out to characterized the feature, crystalline quality, and optical property of the alloy nanowires. Photoluminescence from the alloy nanowires shows near-band-edge (NBE) emission with16nm blue-shift, realized widespread alterations for the ZnO energy band, indicating the success of Mg alloying into ZnO nanowires.