| Nanometer MoS2thin film has special layered structure, high chemical stability andgood lubrication performance, and it also can be used as p-type semiconductor material,which makes it has a wide application and become a research focus. In this paper, nanometerMoS2particles and MoS2/Al thin films were separately prepared, and I-V characters ofMoS2/Al thin films were also investigated.In this paper,（NH4）6Mo7O24·4H2O and （NH4）2S were firstly used as raw materials tosynthesize （NH4）2MoS4orthorhombic crystal with metallic luster in the ammonia water at60℃. Then （NH4）2MoS4prepared by our lab was used as precursor to synthesize MoS2nanoparticles in aqueous solution, different samples were prepared by changing experimentalconditions, and XRD, SEM, electronic spectra and UV-vis instruments were used to detectand characterize the samples. At the same time, the effects of concentration, reactiontemperature, reaction time on the MoS2nanoparticles were investigated, the mechanism ofMoS2formed by the decomposition of （NH4）2MoS4was analyzed, and the results show thatMoS2particle size can decrease with the decrease of （NH4）2MoS4concentration and be easyto agglomerate. Decomposition temperature and reaction rate had little effect on the MoS2morphology and structure. MoS2particle size can decrease with the increase of reaction time.The MoS2nanoparticles made by our lab were used as raw material to prepare MoS2/Alcoating film on surface of metal Al by hot dip coating method, the MoS2/Al samples weredetected and characterized by SEM and XRD, and coating film of MoS2nanoparticles withuniform thickness and close atoms arrangement was formed on the surface of Al film. Theperformances of I-Vs for samples with different annealing time were also detected byKEITHLEY4200Sourcemeter instrument, and the results show that I-V curve of MoS2/Alcoating film with20min of annealing treatment time is close to linear relation, but currentmutation is large. I-V curves of MoS2/Al coating film with30min,40min and60min ofannealing treatment time had good relationship with semiconductor index. MoS2/Al coatingfilm has good Schottky junction semiconductor properties when I-V performance of thesamples with different annealing time are compared and analyzed. |
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