Investigation On Aqueous Method And Physical Properties Of ZNO/GAN Heterostructure

Zinc oxide (ZnO) has attracted considerable attention due to its good performances such as wide banggap, high exciton-binding energy at room temperature and polar crystal characteristic.In this paper, we reported a peculiar ZnO nanostructure grown on cracked GaN/Si (111) by low-temperature aqueous solution method without any help of metal catalysts, which called ZnO microwalls. And this is innovative point of this paper. Firstly, different growth time and reactant concentration were separately designed to observe the growth process of ZnO microwalls as well as the influence of reactant concentration on ZnO microwalls’ morphology. Field emission scanning electron microscopy (FE-SEM Hitachi S-4800) and energy-dispersive x-ray spectroscopy (EDS) were both used to characterize the morphology and composition of ZnO microwalls, and the results were also carefully analyzed. Secondly, relevant electrical tests were carried out on the ZnO microwalls.In further study, Zinc nitric and zinc acetate were taken as different zinc source for the growth of two-dimensional ZnO films on GaN/sapphire. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM) were used to characterize and compare the morphology difference between two kinds of ZnO films. Finally, n-ZnO/p-GaN heterostructure devices were prepared using well-grown ZnO films and electroluminescense measurement has been carried out analyze the luminescence property of the devices.