Fabrication Of Nano-solenoid, And The Synthesis, Characterization And Properties Of GaN Nanowires

Recently, the wide application of microelectromechanical system in electronic information field has greatly promoted the development of the semiconductor science and technology. In particular, the dimension of the devices have been extensively investigated to meet the need of miniaturization and integration of electronic products. Low-dimensional structures have been demonstrated with special characteristics and various applications due to their performance in size, mechanical and electrics. The work presented in this thesis mainly consists of two parts. The first part describes a method for fabrication of nano-solenoid. The second part demonstrates the synthesis and characterization of GaN nanowires, fabrication of silicon based electronic devices and investigation of its electrical properties. The main achievements are shown as follows:The work in first part is the fabrication of three-dimensional nano-soleniod by electrospinning. Combining the elecctrospinning and sol-gel technology, we successfully fabricated three-dimensional nano-soleniod using a rotating equipment as the collector. The prepared nano-solenoid with three-dimensional structure could be expected to be used as the inductance in electronic components field.The main content of the second part is a systematically study for systhesis and characterization of GaN nanowires, fabrication of silicon based electronic devices and investigation of the electrical properties of GaN nanowires. GaN nanowires were successfully fabricated by introducing vaportransport using gallium oxide and ammonia as the source of Ga and N, respectively. Gold and nickel were used as catalyst. By adjusting the position of substrate, GaN nanowires with controlled diameter were obtained. It should be noted that GaN nanowires with length more than400μm were obtained by adjusting the growth time.Using micromachining technology, we also fabricated GaN nanowires field effect transistors. The electrical measurements indicate that the GaN nanowires are n-type.