Fabrication Of （Pb, La）（Zr, Ti）O₃ Ferroelectric Array And Their Ferroelectric Characteristic

Ferroelectric films have been found wide applications in the ferroelectric random access memories and uncooled infrared sensor for thermal imaging. Particularly with the improvement in the density of memory and the resolution of infrared (IR) imaging, much attention has been paid to the preperation of large-area high density ferroelectric array, especially the ferroelectric properties of fine-pattern films. In this research, PLZT ferroelectric array has been prepared by several methods which are based on the chemically modified sol-gel method. The ferroelectric characteristics of the micro-size dot were investigated by the AFM and TF-Analyzer 2000 online operation. The results are listed as follows:(1) PLZT ferroelectric films prepared by both organic salt method and inorganic salt method exhibit ferroelectric properties. The results show that the PLZT ferroelectric films obtained by inorganic salt method have better surface and ferroelectric properties.The chelate rings depending upon metals ion and bezoylacetone (BzAcH) exist in PLZT gel films prepared by the two methods and both of the PLZT gel films exhibit characteristics of UV photosensitivity.(2) Ferroelectric arrays with periods of 1μm and 0.3μm have been achieved by laser interference method. The SEM and AFM show that the obtained arrays are uniform and regular.(3) PLZT ferroelectric arrays are fabricated by the template-assembling method. The AFM reveals that the size of PLZT array dots is 500nm×500nm×18nm.(4) The ferroelectric properties of the array with lateral size of 500nm were investigated by the on-line operation of TF analyzer and atomic force microscopy (AFM). The polarization reversal characteristics of the single dot can be observed at the lower frequency and applied voltage (below 300Hz and 3V)...