| In the21st century, changing energy structure and developing green energy haveattracted much attention as the mankind facing the energy crisis and environmentdegradation. Solar energy is one of the most promising renewable and clean energies, and itcan be changed to available electrical energy for human without materials loss by usingsolar cells. In the field of solar cells, in order to increase the conversion efficiency, reducethe production cost of solar cells and be friendly to environment, the most basic and keyproblem is the choice and preparation of materials. The Cu2ZnSnS4（CZTS） studied in thisthesis is one of the most promising new type of solar cell materials. The constituentelements of CZTS are non-toxic and abundant. The theoretical power conversion efficiencylimit for solar cells based on CZTS is32.2%. The preparation and characteristics of CZTSthin films and its heterojunction devices have been studied and discussed in the thesis.The CZTS thin films have been deposited by pulsed laser deposition （PLD） andmagnetron sputtering. A series of CZTS thin films have been prepared by PLD withdifferent pulsed laser energy on glass substrate, and CZTS thin films were deposited onglass substrate by magnetron sputtering method at room temperature and annealed rapidlyin Ar atmosphere at different annealing temperature. The chemical composition, crystalstructure, surface morphology, optical and electrical properties of CZTS thin films preparedat different condition were investigated by X-ray energy disperse spectroscopy （EDS）,X-ray diffraction （XRD）, atomic force microscopy （AFM） and ultraviolet-visible-nearinfrared （UV-Vis-NIR） absorption spectra, the preparation conditions of high-quality CZTSthin film were obtained.The p-CZTS/n-Si and p-CZTS/n-ZnS heterojunction devices have been fabricated byPLD and were analyzed by the semiconductor characterization system. I-V test resultsshowed the p-CZTS/n-Si devices had good rectification characteristics and certainphotovoltaic properties, the p-CZTS/n-ZnS device had good rectification characteristics andphotoelectric response. |
