Study Of CIGS Thin Film Solar Cells Based On Solution Process

Recently, copper indium gallium selenide (CIGS) material has drawn considerableattention due to their outstanding properties, such as high conversion efficiency, stableperformance, anti-jamming, and anti-radiation. In this work, we mainly focused on thestudy of CIGS absorb layer and Zns buffer layer in the thin film solar cells. The majorpurpose of our study is to explore large area and high quality method to fabricate highquality CIGS and ZnS thin films, which could lay a foundation for the development ofCIGS thin-film battery devices. Gallium (Ga) in the CIGS crystal just played as the roleof replacing In element, which can adjust the band gap of the CIGS-based compound.Therefore, the CIS compounds with Ga can be discussed after copper indium sulfide(CIS) system being successfully developed. The main topic of this research is about CISsystem thin film solar cells.Our method break the bottlenecks of CIGS film fabricated by non-vacuummethods which needs sulphidation or selenization. Furthermore, in conjunction with thestarting points that nano material has advantageous performances, the synthesis of CISnanocraystalline and fabrication of CIS thin film solar cells in this work is based ona/the solution process. The main subject of the research and development work carriedout by the following four steps:(1) Using the solution process to synthesize CIS nanocrystals. CIS material wassynthesized by using different methods. Detailed differences of these methods wereanalyzed. The work has successfully used a Schlenk line and the microwave heatingmethod to fabricate different size of CIS nanocrystalline materials, which can be welltuned from2-10nm.(2) Preparation of CIS absorption layer. Pre-CIS thin film was prepared byspin-coating. Dense CIS films can be obtained after recrystallization heat treatmentunder500℃.This method is mainly focused on the study of CIS Nanocrystallinedispersant and the heat treatment conditions.(3) Fabrication of N-type layer. To combine a P-type CIS film to fabricateoptoelectronic devices, we studied the preparation technology of N-type film.Chemical bath has been used to fabricate ZnS buffer layer. We have learned to employ the entirepreparation process of ZnS buffer layer.(4) Verifying the optical and electrical properties of the CIS. For the purpose oftestifying the photoelectric performance of CIS film which prepared by solution process,an easy way has selected to do it. A simple PN junction optoelectronic device wasfabricated by contact P type and N-type CIS film directly. Open-circuit current andshort-circuit current can be detected under Solar Simulation System, which can provethat CIS material synthesized by our method have optoelectronic property.