| P-type boron-doped hydrogenated nanocrystalline silicon (nc-Si(B):H) thin films weredeposited on ordinary glass substrate by conventional radio frequency plasma enhancedchemical vapor deposition (PECVD) through changing the process parameters such as thedoping concentration, substrate temperature, using SiH4and H2as reaction gas sources,0.5%B2H6as dopant diluted by H2. The films thickness was measured by Alpha step apparatus.Photoelectric properties were characterized and analyzed by ultraviolet visible near infraredspectrophotometer (UV-VIS NIR) and semiconductor tester. The results showed that theoptical band gap of the film is1.94eV and conductivity is0.1-1cm-1while broaneconcentration B2H6/SiH4=0.2%.It is suitable for window layers of nc-Si:H p-i-n solar cells.Structure characterization and photoelectric properties of nc-Si:H thin films were analyzed atdifferent substrate temperature. The result indicate that nc-Si:H thin films have suitablecrystalline fraction and grain size, a good uniformity, absorption capacity and conductivity atsubstrate temperature of250℃. Crystalline and grain size of the film is57%and5.4nm,respective. The nc-Si:H p-i-n solar cells were fabricated and analyzed.The resultindicate that Voc=0.43V，Jsc=6.32mA/cm2，FF=0.49，η=1.36%when intrinsic layerthickness was800nm. |
