The Study For Mechanism And Surface Passivation Of Film About Crystalline Silicon Solar Cells

Summary in recent years, with the development of solar technology, people in their daily life in the solar cell applications more and more widely, but most of the current application is the Silicon cells. And how to decrease surface recombination velocity of the solar, increase the efficiency of the photovoltaic conversion into current research.Aluminum oxide film having a high dielectric constant, good thermal stability, lower preparation temperature, etc, and it can effectively decrease the crystalline silicon’s surface recombination velocity and improve the efficiency of solar cell’s conversion efficiency. For the Silicon cells, aluminum oxide film is very suitable as surface passivation film.Overall, this paper studies the preparation of alumina films on crystalline silicon solar cells with the sol-gel method, and we also examine several major film’s the mechanism of passivation. Through the control of process parameters during the experiment to get different quality alumina film. In addition, to aluminum oxide film, we test and analysis.This article first introduces the development of solar cell and passivation, then studies the mechanism of solar cell and passivation. This paper also discusses the principle of C-V method about MIS structure. We successfully produced the high quality of aluminum oxide film on crystalline silicon solar cells, and it’s transmittance is up to95.6%, the cutoff frequency is approximately2×105Hz and the density of interface state is5.82×1011cm-2eV-1. By analysising, the quality of film is relate to process parameters closely. Under certain conditions, a thicker and higher concentration film is superior. Moreover, high temperature and long annealing time is necessary to produce aluminum oxide film, the film have excellent effect of passivation about crystalline silicon solar cell.