Preparation And Properties Of Cu （In, Al）（S, Se）₂Thin Film Solar Cell Absorber Layer

With rapid development of the society and technique, non-renewable resources are exhausted and environmental issues brought by them are appeared increasingly, as a result, research and develop new and renewable green energy is becoming an global object gradually. As one energy owned larger irradiation area, longer potential reserves, more purity and higher efficient, solar energy has been paid widespread attention, thus, the preparation and research on solar cells is becoming one important project each government support actively. Among all the solar cells, CuInSe2thin film solar cells have led mainstream trend of thin film photovoltaic cell industry because of its lower cost, more stable performance and higher conversion efficiency.Although the CuInSe2thin film solar cells exhibit excellent performance and good prospects, the energy gap of the absorbing layer CuInSe2relatively low, only1.04eV, not the position of optimal absorption of the solar spectrum1.4eV-1.5eV, affecting the transformation efficiency improved. Studies have shown that it can replace the energy gap to adjust to the optimum position by the absorption of the solar spectrum congeners. So in order to reduce the production costs、mediation band gap of the CuInSe2cell and improve its optical performance, this paper uses inexpensive congeners Al and S in the amount of partially replace In and Se elements to prepare Cu(In, A1)(S, Se)2absorption layer material, and have studied its properties.Thin films of Cu(In, A1)(S, Se)2were successfully prepared by direct sulfuration and selenization of the Cu-In-Al metallic precursors, which were deposited by co-sputtering technique onto soda-lime-glass(SLG) substrates under vacuum conditions. This experiment has investigated the co-sputtering crafts of the precursor, and the influence on different annealing conditions. The final samples were characterized by EDAX, XRD, SEM, Uv-vis respectivery for composition, crystalline phase, surface morphology and optical properties, to develop better crafts. It was shown that the chalcopyrite structure films were mainly determined by the co-sputtering targets powers and further optimized by changing the annealing temperatures and minutes. Under the targets power combination of Cu50W, CuIn0.7Al0.330W, Al60W for15min, and then after annealing at500℃for20min, the films showed a single chalcopyrite phase, poor-Cu structure, tense surface appearance, chemical composition close to the determined value and direct band gap 1.44ev close to the ideal band gap of solar cells...