CdS/CdTe Thin Films Solar Cell

The development of solar cells was reviewed in the articlefirstly. Then the preparation and characterization of solarcells were introduced. In order to obtain better photoelectricproperties such as open-circuit voltage , short circuitcurrent , fill factor and the photo-to-electron conversionefficiency of solar cells, we focus on modify and improve thepreparation method. In this article, the main preparationprocedures are given as follows: Firstly, ultrasonic spraypyrolysis technique was employed to deposit SnO₂ transparentand conducting （TC） films on glass, then chemical bathdeposition（CBD） method was used to deposit n-typepolycrystalline Cds film, close spaced sublimation （CSS） methodwas applied to deposit p-type CdTe film, finally back contactelectrode. Then the as-deposited films were measured by X-Raydiffraction meter（XRD）, Transmission electron microscopy （TEM） ;Atoms force microscopy （AFM）, UV-visible absorption spectrumand Photoconduction method to characterize the crystalstructure, optical and electrical properties of filmrespectively. Compared with other solar cells, CdS/CdTe typethin film solar cells have advantage in their lower price,simpler preparation and greater industrial production. In ourexperiments, we have prepared CdS/CdTe thin film solar cellswith open-circuit voltage of 791. 9mV, short circuit current of20.36 mA/cm² , fill factor of 55.44% and photo-to-electronconversion efficiency of 8.95% on 25 cm² glass. Although thelow fill factor 55. 44%, it is possible to improve it by furthermodifying preparation, therefore the photo-to-electronconversion efficiency can be improved correspondingly.