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Preparation And Properties Of Thin Film Materials CuFeS 2 Absorbing Layer / ZnS Buffer Layer

Posted on:2014-07-20Degree:MasterType:Thesis
Country:ChinaCandidate:Z Z TaoFull Text:PDF
GTID:2261330422467390Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
The absorber layer and the buffer layer of the compound solar battery as the main material of thesolar battery device,has long been the hot research field. Scientific research shows that the performanceand application of the material depends not only on the structure itself, crystal form and composition,but also morphology and size play a decisive role in the performance of the material, CuFeS2and ZnSas a metal chalcogenide semiconductor nanomaterials have attracted much attention because of itsspecial physical and chemical properties, For CuFeS2and ZnS semiconductor materials synthesis has alot of reports, but fast and efficient synthesis of compound semiconductor materials through theeasy-to-moderate solvothermal reaction has been reported rarely; and the drawbacks of traditionalsputtering film-forming method, a novel organic film curing. In summary, This article focuses on thecompound semiconductor material morphology control significance,and focuse these two problems ofsemiconductor materials synthesis and film-forming, Proposing my research ways and methods.Thefollowing are my research content:1. Preparation and characterization of CuFeS2nanocrystalsThiourea, cupric chloride, and ferrous sulfate are used as reactants, reaction medium is anhydrousethylenediamine, The Solvothermal sheet CuFeS2crystal And discuss the effect of time, temperature,PVP conditions to CuFeS2crystal structure, atomic ratio, morphology and optical absorption, andanalyze the reasons. to results show that to temperature and time is to essential factor to crystal growth,to appropriate reaction temperature and reaction time for crystal growth and development. AppropriatePVP as the surfactant, For itself has a surface adsorption, can improve the agglomeration, Insummary,three optimum conditions for preparing the light absorption properties of the best CuFeS2.2. Preparation and Characterization of ZnS crystalsThiourea, zinc acetate are used as reactants, Using ethylenediamine as the reaction medium,Through Solvothermal prepared ZnS,Discuss the effect of time, temperature, PVP Added quality tosynthetic spherical ZnS crystal structure, atomic number ratio, morphology and light absorptionproperties and explanation the phenomenon.The results show that the temperature and reaction time, as anecessary condition of the Synthesis of ZnS, appropriate control of temperature and time, can improvethe crystal structure and morphology and the light absorbing properties; appropriate quality PVP as atemplate and a dispersing agent, For the surface adsorption, can effectively improve the agglomerationeffect, promoting the electron transport, improve the light absorption properties. Considering the bestperformance was prepared spherical ZnS.3. Preparation and performance of CuFeS2and ZnS filmsEpoxy resin and fatty amine as a film-forming substances,Select the optimal conditions for thesynthesis of the absorbing layer and the buffer layer material as a function of filler added to the resin,preparation of the good performance of the thin film material by Cured film way,and analysisperformance of thin film materials,The results show that using of the resin cured film is quickly andefficiently,And the performance of the system as a whole did not change significantly,Light absorptionproperties remain basically unchanged.
Keywords/Search Tags:CuFeS2, ZnS, Solvothermal, cured film, optical absorption
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