Firstly, a series of derivatives of indene additional fullerenes have beensynthesized via D-A reaction, including IC60MA (mono-adduct), IC60BA (bis-adduct),IC70MA (mono-adduct), IC70BA (bis-adduct) and IC70TA (tris-adduct), in whichIC70TA is synthesized for the first time. The isomers of IC60BA and IC70BA areobtained by the separation of HPLC.Then we use IC70BA and its isomers as acceptor,P3HT as donor studied the photovoltaic properties by preparing PSCs devices with thestructure of ITO/PEDOT: PSS/P3HT:IC70BA/Ca/Al.Secondly, the indene C84mono-adduct is synthesized for the first time, and thenwe used the MS,1H-NMR, UV-vis-NIR absorption spectra and electrochemicalmethod (cyclic voltammetry) to characterize its structure.Furthermore, we design a device with structure of ITO/PEDOT:PSS/P3HT/P3HT:PCBM/Al/Ca and research the influence of different thickness of P3HT additive layersto the device properties with different thickness of active layers. The P3HT additivelayer increases short circuit current but also increases series resistance of device at thesame time results in improving power conversion efficiency with thickness of activelayer between140nm to160nm and reducing power conversion efficiency withthickness of active layer between180nm to200nm. |